We report on GaAs-based high power density vertical-cavity surface-emitting laser diodes (VCSELs) with ion implanted isolated current apertures. A continuous-wave output power of over 380 mW and the power density of 4.9 kW/cm have been achieved at 15 °C from the 100-μm-diameter aperture, which is the highest output characteristic ever reported for an ion implanted VCSEL. A high background suppression ratio of over 40 dB has also been obtained at the emission wavelength of 970 nm. The ion implantation technique provides an excellent current isolation in the apertures and would be a key to realize high power output from a VCSEL array.
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