AI Article Synopsis

  • The study focuses on the electronic transport properties of dual-gated twisted-bilayer graphene, highlighting unique behaviors due to the close proximity of layers.
  • Researchers find that each graphene layer contributes independently to magnetoresistance, and they can control the filling factors of these layers separately through dual gates.
  • An insulating state is observed at zero filling factor, explained by the interaction of counterpropagating edge states, especially under large displacement fields.

Article Abstract

We investigate electronic transport in dual-gated twisted-bilayer graphene. Despite the subnanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of each layer. We demonstrate that the filling factor of each layer can be independently controlled via the dual gates, which we use to induce Landau level crossings between the layers. By analyzing the gate dependence of the Landau level crossings, we characterize the finite interlayer screening and extract the capacitance between the atomically spaced layers. At zero filling factor, we observe an insulating state at large displacement fields, which can be explained by the presence of counterpropagating edge states with interlayer coupling.

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http://dx.doi.org/10.1103/PhysRevLett.108.076601DOI Listing

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