We determine the atomic structure of the pseudotetragonal T phase and the pseudorhombohedral R phase in highly strained multiferroic BiFeO(3) thin films by using a combination of atomic-resolution scanning transmission electron microscopy and electron energy-loss spectroscopy. The coordination of the Fe atoms and their displacement relative to the O and Bi positions are assessed by direct imaging. These observations allow us to interpret the electronic structure data derived from electron energy-loss spectroscopy and provide evidence for the giant spontaneous polarization in strained BiFeO(3) thin films.
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http://dx.doi.org/10.1103/PhysRevLett.108.047601 | DOI Listing |
Adv Mater
December 2024
Institute for Superconducting and Electronic Materials, Faculty of Engineering and Information Sciences, University of Wollongong, Innovation Campus, North Wollongong, NSW, 2500, Australia.
Piezoelectric micromachined ultrasound transducers (pMUTs), especially those using lead-free materials, are crucial next-generation microdevices for precise actuation and sensing, driving advancements in medical, industrial, and environmental applications. Bismuth ferrite (BiFeO) is emerging as a promising lead-free piezoelectric material to replace Pb(Zr,Ti)O in pMUTs. Despite its potential, the integration of BiFeO thin films into pMUTs has been hindered by poling issues.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Intelligent Materials Lab, School of Physics and Materials Science, Nanchang University, Nanchang 330031, People's Republic of China.
Interface effects and strain engineering have emerged as critical strategies for modulating polarization and internal electric fields in ferroelectric materials, playing a vital role in exploring coupling mechanisms and developing ferroelectric diode devices. In this study, we selected BiFeO as a representative ferroelectric material and utilized interface engineering to control its polarization. By precisely manipulating the atomic stacking sequence at the interface, we influenced the electrostatic potential step across the interface, resulting in a bias voltage in the ferroelectric hysteresis loops that defined the ferroelectric state.
View Article and Find Full Text PDFAnal Chem
December 2024
Department of Biophysics, School of Basic Medical Sciences, Health Science Center, Xi'an Jiaotong University, Xi'an 710061, China.
ACS Appl Electron Mater
November 2024
Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Bellaterra 08193, Spain.
Materials (Basel)
November 2024
Department of Material Science and Engineering, NTNU Norwegian University of Science and Technology, N-7491 Trondheim, Norway.
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