AI Article Synopsis
- Scientists are studying how to grow super thin and long nanowires made of indium antimonide, which is important for their special properties.
- They figured out that changing the V/III ratio and how many nanowires they make can change the shape of the nanowires, from thin ones to nanocubes.
- They found the best distance between the nanowires to be about 500 nanometers, which helps them create strong electronic devices with fast-moving electrons.*
Article Abstract
High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin nanowires. Variation of the V/III ratio and the nanowire density are found to have the same influence on the "local" growth conditions and can control the InSb shape from thin nanowires to nanocubes. We propose that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape. A sweet spot is found for nanowire interdistances around 500 nm leading to aspect ratios up to 35. High electron mobilities up to 3.5 × 10(4) cm(2) V(-1) s(-1) enable the realization of complex spintronic and topological devices.
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| http://dx.doi.org/10.1021/nl203846g | DOI Listing |
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