Regenerable resistive switching in silicon oxide based nanojunctions.

Adv Mater

Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali, Nanostrutturati (CNR-ISMN), Bologna, Italy.

Published: March 2012

A nanomemristor based on SiO(2) is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.

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http://dx.doi.org/10.1002/adma.201104301DOI Listing

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