Epitaxial ferroelectric heterostructures fabricated by selective area epitaxy of SrRuO3 using an MgO mask.

Adv Mater

Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA.

Published: March 2012

AI Article Synopsis

  • The new process uses traditional lithography and selective wet-etching of MgO to create a high-temperature hard mask.
  • The hard mask can withstand standard nano-lithography methods and heat treatments over 1000 °C.
  • This technique enhances ferroelectric thin-film capacitors by producing temperature-stable contacts that exhibit low leakage, better fatigue properties, and improved stability at high temperatures.

Article Abstract

Illustration of a new high-temperature hard-mask process based on traditional lithography and selective wet-etching of MgO. The hard mask is compatible with standard nano-lithography techniques and heat treatments in excess of 1000 °C. Here, this technique is applied to produce temperature-stable contacts that give rise to low leakage, improved fatigue properties, and excellent high-temperature stability in ferroelectric thin-film capacitors.

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http://dx.doi.org/10.1002/adma.201104697DOI Listing

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