Illustration of a new high-temperature hard-mask process based on traditional lithography and selective wet-etching of MgO. The hard mask is compatible with standard nano-lithography techniques and heat treatments in excess of 1000 °C. Here, this technique is applied to produce temperature-stable contacts that give rise to low leakage, improved fatigue properties, and excellent high-temperature stability in ferroelectric thin-film capacitors.
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http://dx.doi.org/10.1002/adma.201104697 | DOI Listing |
Nano Lett
January 2025
Department of Engineering Mechanics, Zhejiang University, Hangzhou, 310027 Zhejiang, China.
Chiral vortices and their phase transition in ferroelectric/dielectric heterostructures have drawn significant attention in the field of condensed matter. However, the dynamical origin of the chiral phase transition from achiral to chiral polar vortices has remained elusive. Here, we develop a phase-field perturbation model and discover the softening of out-of-plane vibration mode of polar vortices in [(PbTiO)/(SrTiO)] superlattices at a critical epitaxial strain or temperature.
View Article and Find Full Text PDFMater Horiz
January 2025
Department of Physics, Pukyong National University, Busan 48513, Korea.
Altermagnetism is a new class of material with zero net magnetization, but having a nonrelativistic spin-split band structure. Here, we investigate the multifunctional properties of the hexagonal wurtzite MnO (-MnO). -MnO has a direct band gap of 0.
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, CB3 0FS, Cambridge, UK.
The discovery of ferroelectric phases in HfO-based films has reignited interest in ferroelectrics and their application in resistive switching (RS) devices. This study investigates the pivotal role of electrodes in facilitating the Schottky-to-Ohmic transition (SOT) observed in devices consisting of ultrathin epitaxial ferroelectric HfYO (YHO) films deposited on LaSrMnO-buffered Nb-doped SrTiO (NbSTO|LSMO) with Ti|Au top electrodes. These findings indicate combined filamentary RS and ferroelectric switching occurs in devices with designed electrodes, having an ON/OFF ratio of over 100 during about 10 cycles.
View Article and Find Full Text PDFNat Commun
January 2025
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
The composition in ferroelectric oxide films is decisive for optimizing properties and device performances. Controlling a composition distribution in these films by a facile approach is thus highly desired. In this work, we report a solution epitaxy of PbZrTiO films with a continuous gradient of Zr concentration, realized by a competitive growth at ~220 °C.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Spain.
Nanolaminates based on ferroelectric polycrystalline doped HfO have gained interest because those compounds show enhanced functional properties. Here, we achieve coexisting improvement of remanent polarization and dielectric permittivity in wake-up-free epitaxial HfZrO/HfO nanolaminates with different numbers of HfO nanolayers if compared with HfZrO single films of equivalent thickness or other reported polycrystalline nanolaminates. Comprehensive structural characterization reveals that the origin of the enhancement must be the larger amount of the orthorhombic phase in the nanolaminates.
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