CuInSe₂ films were prepared by MBE on GaAs (111) substrates. ZnSe and ZnO are subsequently deposited in situ by MOMBE. Interface parameters like band offsets and morphology are studied by X-ray photoelectron spectroscopy (XPS) and Low energy electron diffraction (LEED). Spectroscopic XPEEM (X-ray photoelectron emission microscopy) at the U49/2 PGM2 beamline at BESSY was used to investigate the lateral homogenity of the interface. After annealing in situ a lateral inhomogenious In diffusion is observed into the ZnSe/ZnO interface.
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| http://dx.doi.org/10.1016/j.ultramic.2011.11.006 | DOI Listing |
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