This study aims to establish the sensitive, ∼120 μm high spatial resolution, high dynamic range Ge-doped optical fibres as thermoluminescence (TL) dosimeters for brachytherapy dose distribution. This requires investigation to accommodate sensitivity of detection, both for the possibility of short range dose deposition from beta components as well as gamma/x-mediated dose. In-air measurements are made at distances close to radionuclide sources, evaluating the fall off in dose along the transverse axis of 133Ba and 60Co radioactive sources, at distances from 2 mm up to 20 mm from their midpoints. Measurements have been compared with Monte Carlo code DOSRZnrc simulations for photon-mediated dose only, agreement being obtained to within 3% and 1% for the 133Ba and 60Co sources, respectively. As such, in both cases it is determined that as intended, beta dose has been filtered out by source encapsulation.
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http://dx.doi.org/10.1016/j.apradiso.2011.12.027 | DOI Listing |
Sci Rep
December 2024
School of Information and Communications Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
J Phys Condens Matter
February 2024
Thai Nguyen University of Education, Thai Nguyen City, Thai Nguyen Province, Vietnam.
Emerging materials, particularly nanomaterials, constitute an enduring focal point of scientific inquiry, with quantum dots being of particular interest. This investigation is centered on elucidating the exceptional structural, electromagnetic, and optical characteristics of hexagonal boron nitride (h-BN) quantum dots and h-BN quantum dots doped with carbon (C) and germanium (Ge). The employed methodology in this study hinges on density functional theory coupled with the Vienna Ab initio simulation package.
View Article and Find Full Text PDFPhys Chem Chem Phys
October 2023
Institute of Spectroscopy, Russian Academy of Sciences, 108840, Moscow, Troitsk, Russia.
We report the growth of Ge-doped homoepitaxial diamond films by microwave plasma CVD in GeH-CH-H gas mixtures at moderate pressures (70-100 Torr). Optical emission spectroscopy was used to monitor Ge, H, and C species in the plasma at different process parameters, and trends for intensities of those radicals, gas temperature, and excitation temperature, with variations of GeH or CH precursor concentrations, were investigated. The film deposited on (111)-oriented single crystal diamond substrates in a high growth rate regime revealed a strong emission of a germanium-vacancy (GeV) color center with a zero-phonon line at ≈604 nm wavelength in photoluminescence (PL) spectra, confirming the successful doping.
View Article and Find Full Text PDFJ Phys Condens Matter
June 2023
Institute of Southeast Vietnamese Studies, Thu Dau Mot University, Binh Duong 820000, Vietnam.
With the continuous development of nanotechnology, the search for new material structures plays a crucial role. Silicene nanoribbons (SiNRs) are one-dimensional materials that hold promise for numerous potential applications in the future. The electric and optical properties of C, Ge-doped armchair SiNRs are investigated in this study using density functional theory.
View Article and Find Full Text PDFSensors (Basel)
April 2023
Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things, Guangdong and Hong Kong Joint Research Centre for Optical Fiber Sensors, State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China.
A distributed optical fiber refractive index sensor based on etched Ge-doped SMF in optical frequency domain reflection (OFDR) was proposed and demonstrated. The etched Ge-doped SMF was obtained by only using wet-etching, i.e.
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