The response of a red blood cell (RBC) to deformation depends on its membrane, a composite of a lipid bilayer and a skeleton, which is a closed, two-dimensional network of spectrin tetramers as its bonds. The deformation of the skeleton and its lateral redistribution are studied in terms of the RBC resting state for a fixed geometry of the RBC, partially aspirated into a micropipette. The geometry of the RBC skeleton in its initial state is taken to be either two concentric circles, a references biconcave shape or a sphere. It is assumed that in its initial state the skeleton is distributed laterally in a homogeneous manner with its bonds either unstressed, presenting its stress-free state, or prestressed. The lateral distribution was calculated using a variational calculation. It was assumed that the spectrin tetramer bonds exhibit a linear elasticity. The results showed a significant effect of the initial skeleton geometry on its lateral distribution in the deformed state. The proposed model is used to analyze the measurements of skeleton extension ratios by the method of applying two modes of RBC micropipette aspiration.
Download full-text PDF |
Source |
---|---|
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6275672 | PMC |
http://dx.doi.org/10.2478/s11658-012-0005-8 | DOI Listing |
Angew Chem Int Ed Engl
December 2024
State Key Laboratory of Luminescent Materials and Devices &, South China Advanced Institute for Soft Matter Science and Technology, Guangdong Basic Research Center of Excellence for Energy &, Information Polymer Materials, South China University of Technology, 510640, Guangzhou, P. R. China.
Nanoimprint lithography (NIL) has been broadly applied in the fabrication of nano-patterned polymer films for cost-efficiency and high through-put; however, the intrinsic tradeoff between mechanical strength and residual stress of polymer films significantly limits the NIL resolution while the harsh processing conditions limit its versatile applications to different substrates. Herein, 1 nm metal oxide cluster, phosphotungstic acid (PTA), is used to complex with polyvinyl alcohol (PVA) for high-resolution NIL that can be operated at large-scale and mild conditions. The ultra-small size of PTA enables dense supramolecular interaction with PVA for the diminished crystallinity and accelerated chain dynamics that help relax the residual stress during film casting.
View Article and Find Full Text PDFNanomaterials (Basel)
November 2024
School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China.
In this work, we present the novel application of SiN stress-engineering techniques for the suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors (HEMTs), accompanied by a comprehensive analysis of the underlying mechanisms. The compressive stress SiN passivation significantly enhances the barrier height at the heterojunction beneath the gate, maintaining it above the quasi-Fermi level even as rises to 20 V. As a result, in GaN devices with a gate length of 160 nm, the devices with compressive stress SiN passivation exhibit significantly lower drain-induced barrier lowering (DIBL) factors of 2.
View Article and Find Full Text PDFInt J Mol Sci
October 2024
Insititute of Materials and Environmental Chemistry, HUN-REN Research Centre for Natural Sciences, 1117 Budapest, Hungary.
The modulation of autophagy plays a dual role in tumor cells, with the potential to both promote and suppress tumor proliferation. In order to gain a deeper understanding of the nature of autophagy, we have developed a chemical reaction kinetic model of autophagy and apoptosis based on the mass action kinetic models that have been previously described in the literature. It is regrettable that the authors did not provide all of the information necessary to reconstruct their model, which made their simulation results irreproducible.
View Article and Find Full Text PDFSci Rep
October 2024
Biological Sciences Department, Faculty of Science and Arts, King Abdulaziz University, Rabigh, 21911, Saudi Arabia.
Nanomaterials (Basel)
September 2024
School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China.
In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiN stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiN passivation contributed to the suppression of Fowler-Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!