AI Article Synopsis
- Higher manganese silicide nanowires have been successfully grown on a silicon surface using bismuth nanolines as a precursor.
- Scanning tunneling microscopy (STM) indicates that these nanowires exhibit a consistent linear surface structure with a spacing of 0.56 nm, aimed at minimizing dangling bonds.
- Scanning tunneling spectroscopy (STS) confirms the nanowires as degenerate semiconductors, highlighting their potential use in spintronics technology.
Article Abstract
Higher manganese silicide nanowires have been grown on the Si(001)-2 × 1 surface by the pre-growth of Bi nanolines. Scanning tunnelling microscope (STM) observations show that the nanowire has a linear surface reconstruction with a periodicity of 0.56 nm, and we propose a reconstruction on their surface to reduce the density of dangling bonds, which forms linear structures matching the dimensions from STM. Scanning tunnelling spectroscopy (STS) data agree with previous calculation results and reveal that the nanowires are degenerate semiconductors, with potential application for spintronics.
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| http://dx.doi.org/10.1088/0953-8984/24/9/095005 | DOI Listing |
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