We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.
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http://dx.doi.org/10.1364/OE.19.00B385 | DOI Listing |
Sensors (Basel)
January 2025
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Short-wave infrared (SWIR) imaging has a wide range of applications in civil and military fields. Over the past two decades, significant efforts have been devoted to developing high-resolution, high-sensitivity, and cost-effective SWIR sensors covering the spectral range from 0.9 μm to 3 μm.
View Article and Find Full Text PDFWe consider avalanche photodiodes (APDs) functioning under near Geiger-mode operation for extremely weak light (single or several photons) detection, such as in LiDAR receivers. To meet such demands, APDs which simultaneously have a large active window size, moderate bandwidth (∼GHz), and high internal gain (responsivity), are highly desired. However, it is difficult to design APDs capable of meeting the afore-mentioned performance requirements due to the intrinsic limitations of the gain-bandwidth product (GBP).
View Article and Find Full Text PDFWhat we believe to be a novel fabrication process for monolithic full-color (RGB) micro-LED (µLED) display technology, featuring three-dimensional (3D) and quantum dot (QD)-based color conversion layer, has been proposed. This method offers advantages such as a wide color gamut, high pixel density, high yield, and low cost. A 16 × 16 passive matrix (PM) RGB µLED array, with a pitch size of 80 µm and a pixel density of 328 pixels per inch (PPI), has been successfully realized using flip-chip bonding technology.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2024
School of Mechanical Engineering, Dalian University of Technology, Dalian 116024, China.
Microsyst Nanoeng
September 2024
Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
The demand for high-performance electromechanical resonators is ever-growing across diverse applications, ranging from sensing and time-keeping to advanced communication devices. Among the electromechanical materials being explored, thin-film lithium niobate stands out due to its strong piezoelectric properties and low acoustic loss. However, in nearly all existing lithium niobate electromechanical devices, the configuration is such that the electrodes are in direct contact with the mechanical resonator.
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