Resistive switching in single epitaxial ZnO nanoislands.

ACS Nano

The Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou 730000, China.

Published: February 2012

AI Article Synopsis

  • Resistive memory is emerging as a leading candidate for next-generation nonvolatile memory due to its simple structure and low power consumption.
  • Bipolar resistive switching was observed in ZnO nanoislands, which were examined in four distinct states using conductive atomic force microscopy after voltage application.
  • The resistive switching mechanism in ZnO memories is attributed to the formation and rupture of conductive filaments caused by the migration of oxygen vacancies.

Article Abstract

Resistive memory is one of the most promising candidates for next-generation nonvolatile memory technology due to its variety of advantages, such as simple structure and low-power consumption. Bipolar resistive switching behavior was observed in epitaxial ZnO nanoislands with base diameters and heights ranging around 30 and 40 nm, respectively. All four different states (initial, electroformed, ON, and OFF) of the nanoscale resistive memories were measured by conductive atomic force microscopy immediately after the voltage sweeping was performed. Auger electron spectroscopy and other experiments were also carried out to investigate the switching mechanism. The formation and rupture of conducting filaments induced by oxygen vacancy migration are responsible for the resistive switching behaviors of ZnO resistive memories at the nanoscale.

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Source
http://dx.doi.org/10.1021/nn204809aDOI Listing

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