A novel method for crystalline silicon solar cells with low contact resistance and antireflection coating by an oxidized Mg layer.

One of the key issues in the solar industry is lowering dopant concentration of emitter for high-efficiency crystalline solar cells. However, it is well known that a low surface concentration of dopants results in poor contact formation between the front Ag electrode and the n-layer of Si. In this paper, an evaporated Mg layer is used to reduce series resistance of c-Si solar cells. A layer of Mg metal is deposited on a lightly doped n-type Si emitter by evaporation. Ag electrode is screen printed to collect the generated electrons. Small work function difference between Mg and n-type silicon reduces the contact resistance. During a co-firing process, Mg is oxidized, and the oxidized layer serves as an antireflection layer. The measurement of an Ag/Mg/n-Si solar cell shows that Voc, Jsc, FF, and efficiency are 602 mV, 36.9 mA/cm2, 80.1%, and 17.75%, respectively. It can be applied to the manufacturing of low-cost, simple, and high-efficiency solar cells.