Structure and electrical properties of sputtered TiO2/ZrO2 bilayer composite dielectrics upon annealing in nitrogen.

The high-k dielectric TiO2/ZrO2 bilayer composite film was prepared on a Si substrate by radio frequency magnetron sputtering and post annealing in N2 at various temperatures in the range of 573 K to 973 K. Transmission electron microscopy observation revealed that the bilayer film fully mixed together and had good interfacial property at 773 K. Metal-oxide-semiconductor capacitors with high-k gate dielectric TiO2/ZrO2/p-Si were fabricated using Pt as the top gate electrode and as the bottom side electrode. The largest property permittivity of 46.1 and a very low leakage current density of 3.35 × 10-5 A/cm2 were achieved for the sample of TiO2/ZrO2/Si after annealing at 773 K.