Thalassemia is the commonest inherited autosomal recessive disorders of hemoglobin in southern China. We developed and evaluated a reverse dot blot (RDB) assay combined with flow-through hybridization technology platform for the rapid and simultaneous identification of 5 types of α-thalassemia and 16 types of β-thalassemia common in Chinese. Reliable genotyping of wild-type and thalassemic genomic DNA samples was achieved by means of a gene chip on which allele-specific oligonucleotide probes were immobilized on a nylon membrane. This method involved two multiplex PCR amplification systems of α-thalassemia and β-thalassemia and one time of hybridization. The whole procedure starting from blood sampling to the identification of thalassemia genotype required less than 4h. The diagnostic reliability of this reverse dot blot assay was evaluated on 427 samples (387 cases of thalassemia and 40 healthy persons) by using direct DNA sequence analysis and gap-PCR in a blind study. These samples included 377 cases of blood, 7 cases of amniotic fluid, 18 cases of chorionic villus, and 25 cases of cord blood. The RDB gene chip was in complete concordance with the reference method. The reverse dot blot assay was a simple, rapid, accurate, and cost-effective method to identify common thalassemia genotypes in the Chinese population.
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http://dx.doi.org/10.1016/j.bcmd.2011.12.001 | DOI Listing |
Light Sci Appl
January 2025
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, 350108, Fuzhou, China.
Multifunctional materials have attracted tremendous attention in intelligent and interactive devices. However, achieving multi-dimensional sensing capabilities with the same perovskite quantum dot (PQD) material is still in its infancy, with some considering it currently challenging and even unattainable. Drawing inspiration from neurons, a novel multifunctional CsPbBr/PDMS nanosphere is devised to sense humidity, temperature, and pressure simultaneously with unique interactive responses.
View Article and Find Full Text PDFNanotechnology
January 2025
Radiophysics, Tomsk State University, Lenin, 36, Tomsk, Tomsk region, 634050, RUSSIAN FEDERATION.
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.
View Article and Find Full Text PDFSmall
January 2025
Central Research Institute, BOE Technology Group Co. Ltd, Beijing, 100176, China.
For quantum-dot light-emitting diodes (QLED), electrical aging commonly introduces collective aging sources across all layers, making it difficult to isolate the impact of each layer on electroluminescence (EL) degradation. In this work, a layer-selective aging method using active photoexcitation is proposed, in which the photoexcitation wavelength is used to selectively target specific layers for exciton generation, and an electrical bias is applied to induce photocurrent and create charges. An iterative aging-sampling (A-S) procedure is used to link aging conditions to EL degradation.
View Article and Find Full Text PDFJ Exp Clin Cancer Res
January 2025
Department of Urology, Ren Ji Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai, China.
Background: Most patients with prostate cancer inevitably progress to castration-resistant prostate cancer (CRPC), at which stage chemotherapeutics like docetaxel become the first-line treatment. However, chemotherapy resistance typically develops after an initial period of therapeutic efficacy. Increasing evidence indicates that cancer stem cells confer chemotherapy resistance via exosomes.
View Article and Find Full Text PDFNanotechnology
January 2025
Radiophysics, Tomsk State University, Lenin, 36, Tomsk, Tomsk region, 634050, RUSSIAN FEDERATION.
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.
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