Raman scattering and x-ray diffraction studies of CaSnO(3) perovskite were performed under high-pressure conditions. This high-pressure study was motivated by a recent theoretical study predicting a phase transition in CaSnO(3) from GdFeO(3)-type perovskite to CaIrO(3)-type structure occurred at 12 GPa. Despite no obvious structure change up to a pressure of 26 GPa based on the x-ray diffraction data, high pressure Raman measurements revealed that some Raman modes disappeared upon compression; either merging into neighboring bands or vanishing. The signals for these Raman peaks were recovered during decompression. The measured pressure derivative of Raman shift (∂ν∕∂P) of CaSnO(3) ranged from ~1.29 to ~4.35, up to 20 GPa. Due to the lack of lattice dynamic study for CaSnO(3) perovskite, the mode symmetry for CaSnO(3) was tentatively assigned based on the empirical relation among Ca-bearing perovskites. The pressure derivative of the Raman shifts was found to be related to their mode vibrations: modes related to Ca and O shifts had a strong pressure dependence compared with those associated with oxygen octahedral rotation.
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http://dx.doi.org/10.1063/1.3665189 | DOI Listing |
RSC Adv
July 2024
Department of Physics and Materials Science, Faculty of Science, Chiang Mai University Chiang Mai 50200 Thailand
There is an increasing interest in using piezoelectric materials, including lead-free piezoceramics for medical applications. As a result, more attention has been placed on investigating the biological properties of these materials. In this research experiment, electrical, mechanical, and biological properties of lead-free 0.
View Article and Find Full Text PDFACS Nano
September 2023
Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States.
The alkaline earth stannates are touted for their wide band gaps and the highest room-temperature electron mobilities among all of the perovskite oxides. CaSnO has the highest measured band gap in this family and is thus a particularly promising ultrawide band gap semiconductor. However, discouraging results from previous theoretical studies and failed doping attempts had described this material as "undopable".
View Article and Find Full Text PDFMolecules
April 2022
Institute of Microelectronics of Barcelona (IMB-CNM, CSIC), 08193 Bellaterra, Spain.
In this work, the gas-sensing functionality of porous ceramic bodies formed by the slip casting technique was studied using perovskite nanoparticles of an MSnO system (M = Ba, Ca, Zn) synthesized by a chemical route. The performance and reliability of the sensitive materials in the presence of different volatile organic compounds (acetone, ethanol, and toluene), and other gases (CO, H and NO) were analysed. The ZnSnO, BaSnO, and CaSnO sensors showed sensitivities of 40, 16, and 8% ppm towards acetone, ethanol, and toluene vapours, respectively.
View Article and Find Full Text PDFJ Environ Manage
April 2022
School of Environment and Energy, South China University of Technology, Guangzhou Higher Education Mega Centre, Guangzhou, 510006, PR China; The Key Lab of Pollution Control and Ecosystem Restoration in Industry Clusters, Ministry of Education, Guangzhou, 510006, PR China.
In this study, the physicochemical and photocatalytic properties of two kinds of stannate perovskite oxides (MgSnO and CaSnO) were investigated under simulated sunlight, where dimethyl phthalate (DMP) and diethyl phthalate (DEP) were selected as the probe pollutants. The results of photochemical characterization showed that MgSnO perovskite exhibited better photocatalytic performance than CaSnO perovskite. MgSnO perovskite could effectively degrade 75% of DMP and 79% of DEP through pseudo-first-order reaction kinetics, which remained good in pH 3.
View Article and Find Full Text PDFACS Omega
December 2021
Group of Semiconductors and Environmental Sensor Technologies-Energy Research Center, Faculty of Science, Mohammed V University, B. P. 1014, 10500 Rabat, Morocco.
Stannous-based perovskite oxide materials are regarded as an important class of transparent conductive oxides for various fields of application. Enhancing the properties of such materials and facilitating the synthesis process are considered major challenging aspects for proper device applications. In the present paper, a comprehensive and detailed study of the properties of spray-coated CaSnO thin films onto the Si(100) substrate is reported.
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