A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

J Nanosci Nanotechnol

School of Information and Communications and WCU Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, 1 Oryongdong, Buk-gu, Gwangju, 500-712, Korea.

Published: August 2011

Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

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http://dx.doi.org/10.1166/jnn.2011.4821DOI Listing

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