We demonstrate a direct correlation between the charge state and photoluminescence (PL) intensity of individual CdSe nanowires by actively charging them and performing electrostatic force microscopy and PL measurements simultaneously. While the injection of positive charges leads to an immediate PL quenching, a small amount of injected electrons can lead to an increase of the PL intensity. We directly observed the migration of excess charges into the substrate, which leads to a recovery of the PL. Further, we show that the PL of individual NWs can be actively switched between on and off states by charging with the atomic-force microscope tip. We propose a model based on charge trapping and migration into the substrate to explain our results.
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http://dx.doi.org/10.1103/PhysRevLett.107.137403 | DOI Listing |
Anal Chem
August 2024
College of Agricultural Equipment Engineering, Henan University of Science and Technology, Luoyang, Henan 471003, China.
The electrochemical detection of biosensors is largely governed by the changes in physical properties of redox probes, which are susceptible to electrode substrate effects, inhibiting sensor sensitivity. In this work, a light-driven electrochemical biosensor based on a hybrid nanoantenna was developed for the sensitive detection of fumonisin B1 (FB1). The hybrid nanoantenna sensing interface was constructed by coupling CdSe quantum dots (QDs)-DNA nanowire and graphdiyne oxide composites loaded with methylene blue and gold nanorods (GDYO-MB-Au NRs) using a tetrahedral DNA nanostructure, which acted as a light-driven unit and an amplification unit, respectively.
View Article and Find Full Text PDFACS Sens
July 2024
State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China.
ACS Nano
July 2024
Niedersachsen.next, 30159 Hannover, Germany.
Cation exchange is a versatile method for modifying the material composition and properties of nanostructures. However, control of the degree of exchange and material properties is difficult at the single-particle level. Successive cation exchange from CdSe to AgSe has been utilized here on the same individual nanowires to monitor the change of electronic properties in field-effect transistor devices.
View Article and Find Full Text PDFACS Appl Mater Interfaces
February 2024
Peter Grünberg Institut 9 (PGI 9), Forschungszentrum Jülich, 52425 Jülich, Germany.
Core-only InAs nanowires (NWs) remain of continuing interest for application in modern optical and electrical devices. In this paper, we utilize the II-VI semiconductor CdSe as a shell for III-V InAs NWs to protect the electron transport channel in the InAs core from surface effects. This unique material configuration offers both a small lattice mismatch between InAs and CdSe and a pronounced electronic confinement in the core with type-I band alignment at the interface between both materials.
View Article and Find Full Text PDFPhys Chem Chem Phys
October 2023
Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.
Field-effect transistors (FETs) based on semiconductor nanowires (NWs) have been extensively investigated and used for constructing novel nanoelectronic and optoelectronic devices in the past two decades. High electric field transport characteristics in FETs are of significance in both physics and applications. However, some specific physics phenomena at high electric field, such as drift velocity saturation, have rarely been reported in semiconductor NW FETs.
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