The fabrication of novel iron-doped barium strontium titanate thin films by means of radio frequency (RF) magnetron co-sputtering is shown. Investigations of the elemental composition and the dopant distribution in the thin films obtained by X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and time-of-flight secondary ion mass spectroscopy reveal a homogeneous dopant concentration throughout the thin film. The incorporation of the iron dopant and the temperature-dependent evolution of the crystal structure and morphology are analyzed by electron paramagnetic resonance spectroscopy, X-ray diffraction, Raman spectroscopy, atomic force microscopy, and scanning electron microscopy. In summary, these results emphasize the RF magnetron co-sputter process as a versatile way to fabricate doped thin films.
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January 2025
SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar, 751 005, India.
Understanding the resistive switching (RS) behavior of oxide-based memory devices at nanoscale is crucial for advancement of high-integration density in-memory computing platforms. This study explores a comprehensive growth parameter space to address the RS behavior of pulsed-laser-deposited substoichiometric TiO (TiO) thin films in search of tailored nanoscale memristors with low-power consumption and high stability. Conductive-atomic-force-microscopy-based measurements facilitate deciphering the switching behavior at nanoscale, providing a direct avenue to understand the microstructure-property relationships.
View Article and Find Full Text PDFSmall
January 2025
Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid, 28049, Spain.
Conductive metal-organic frameworks (MOFs) are crystalline, intrinsically porous materials that combine remarkable electrical conductivity with exceptional structural and chemical versatility. This rare combination makes these materials highly suitable for a wide range of energy-related applications. However, the electrical conductivity in MOF-based devices is often limited by the presence of different types of structural disorder.
View Article and Find Full Text PDFNano Lett
January 2025
Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, China.
Efficient oxygen evolution reaction (OER) catalysts with fast kinetics, high efficiency, and stability are essential for scalable green production of hydrogen. The rational design and fabrication of catalysts play a decisive role in their catalytic behavior. This work presents a high-entropy catalyst, FeCoNiCuMo-O, synthesized via carbothermal shock.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
For potential application in advanced memory devices such as dynamic random-access memory (DRAM) or NAND flash, nanolaminated indium oxide (In-O) and gallium oxide (Ga-O) films with five different vertical cation distributions were grown and investigated by using a plasma-enhanced atomic layer deposition (PEALD) process. Specifically, this study provides an in-depth examination of how the control of individual layer thicknesses in the nanolaminated (NL) IGO structure impacts not only the physical and chemical properties of the thin film but also the overall device performance. To eliminate the influence of the cation composition ratio and overall thickness on the IGO thin film, these parameters were held constant across all conditions.
View Article and Find Full Text PDFBackground: Malaria is the disease caused by intracellular parasites known as species and is mainly transmitted by blood sucking female mosquitoes. During pregnancy, malaria results in severe complications to the mother, the fetus and the newborn. Symptoms of malaria, such as fever, malaise, headache, nausea and vomiting, in pregnant women can be mistakenly attributed solely to pregnancy.
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