Solid solutions of BaTiO(3)-Bi(Zn(1/2)Ti(1/2))O(3) were investigated for high-temperature capacitor applications. Compositions close to 0.8BaTiO(3)-0.2Bi(Zn(1/2)Ti(1/2))O(3) revealed pseudo-cubic symmetry and showed a linear dielectric response. The existence of a nearly flat temperature dependence of the relative permittivity over the temperature range of 100 to 350°C was also obtained. In this study, the effects of cation non-stoichiometry and doping were investigated in an attempt to optimize the insulation resistance for high-temperature applications. The dielectric response of (Ba(0.8)-xBi(0.2))(Zn(0.1)Ti(0.9)) O(3) ceramics where 0 ≤ X ≤ 0.08, as well as ZrO2- and Mn(2)O(3)-doped ceramics were studied. The optimum compositions exhibited a relative permittivity in excess of 1150 with a low loss tangent (tan δ < 0.05) that persisted up to a temperature of 460δC. The temperature dependence of resistivity also revealed the improved insulation resistance of Ba-deficient compositions. Additionally, we suggest that an ionic conduction mechanism is responsible for the degradation of resistivity at high temperatures. The temperature coefficient of permittivity ((τ)K) and the RC time constant were also investigated.
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http://dx.doi.org/10.1109/TUFFC.2011.2036 | DOI Listing |
RSC Adv
January 2025
Department of Solid State Physics and Nonlinear Physics, Faculty of Physics and Technology, AL-Farabi Kazakh National University Almaty 050040 Kazakhstan.
In this paper, Gd-doped ZrO gate dielectric films and metal-oxide-semiconductor (MOS) capacitors structured as Al/ZrGdO /Si were prepared using an ultraviolet ozone (UVO)-assisted sol-gel method. The effects of heat treatment temperature on the microstructure, chemical bonding state, optical properties, surface morphology and electrical characteristics of the ZrGdO composite films and MOS capacitors were systematically investigated. The crystalline phase of the ZrGdO films appeared only at 600 °C, indicating that Gd doping effectively inhibits the crystallization of ZrO films.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China.
Polymer-based dielectric films are increasingly demanded for devices under high electric fields used in new energy vehicles, photovoltaic grid connections, oil and gas exploration, and aerospace. However, leakage current is one of the significant factors limiting the improvement of the insulation performance. This paper tested the leakage current and condensed state structure characteristics of biaxially oriented polypropylene (BOPP) films and obtained the nonlinear characteristics of leakage current of BOPP films in the range of 40-440 V/μm and 40-110 °C.
View Article and Find Full Text PDFPLoS One
January 2025
Computer Engineering, CCSIT, King Faisal University, Al Hufuf, Kingdom of Saudi Arabia.
This paper presents a low-power, second-order composite source-follower-based filter architecture optimized for biomedical signal processing, particularly ECG and EEG applications. Source-follower-based filters are recommended in the literature for high-frequency applications due to their lower power consumption when compared to filters with alternative topologies. However, they are not suitable for biomedical applications requiring low cutoff frequencies as they are designed to operate in the saturation region.
View Article and Find Full Text PDFAdv Mater
January 2025
School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, China.
Film capacitors are widely used in advanced electrical and electronic systems. The temperature stability of polymer dielectrics plays a critical role in supporting their performance operation at elevated temperatures. For the last decade, the investigations for new polymer dielectrics with high energy storage performance at higher temperatures (>200 °C) have attracted much attention and numerous strategies have been employed.
View Article and Find Full Text PDFAdv Mater
January 2025
Shanghai Key Laboratory of Electrical Insulation and Thermal Ageing, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
Achieving optimal capacitive energy storage performance necessitates the integration of high energy storage density, typical of ferroelectric dielectrics, with the low polarization loss associated with linear dielectrics. However, combining these characteristics in a single dielectric material is challenging due to the inherent contradictions between the spontaneous polarization of ferroelectric dielectrics and the adaptability of linear dielectrics to changes in the electric field. To address this issue, a linear isotactic sulfonylated polynorbornene dielectric characterized by ferroelectric-like crystals has been developed.
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