AI Article Synopsis
- This paper investigates how photoexcitation in a single-walled carbon nanotube (SWNT) device affects its output power in THz photoconductive switching and photomixing.
- It presents a comprehensive method for calculating THz output power, taking into account various parameters that impact device performance and establishing design-dependent limits.
- Numerical analysis indicates that, provided the device remains thermally stable, the SWNT photoconductive switch can achieve output power improvements nearly 100 times greater than traditional materials like LT-GaAs.
Article Abstract
This paper studies the relation between photoexcitation of a single-walled carbon nanotube (SWNT) based device, and its THz output power in the context of THz photoconductive (PC) switching and THz photomixing. A detailed approach of calculating output THz power for such a device describes the effect of each parameter on the performance of the THz PC switch and highlights the design dependent achievable limits. A numerical assessment, with typical values for each parameter, shows that-subject to thermal stability of the device-SWNT based PC switch can improve the output power by almost two orders of magnitudes compared to conventional materials such as LT-GaAs.
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| http://dx.doi.org/10.1364/OE.19.015077 | DOI Listing |
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