Murine models indicate that Gαs and its extra-long variant XLαs, both of which are derived from GNAS, markedly differ regarding their cellular actions, but these differences are unknown. Here we investigated activation-induced trafficking of Gαs and XLαs, using immunofluorescence microscopy, cell fractionation, and total internal reflection fluorescence microscopy. In transfected cells, XLαs remained localized to the plasma membrane, whereas Gαs redistributed to the cytosol after activation by GTPase-inhibiting mutations, cholera toxin treatment, or G protein-coupled receptor agonists (isoproterenol or parathyroid hormone (PTH)(1-34)). Cholera toxin treatment or agonist (isoproterenol or pituitary adenylate cyclase activating peptide-27) stimulation of PC12 cells expressing Gαs and XLαs endogenously led to an increased abundance of Gαs, but not XLαs, in the soluble fraction. Mutational analyses revealed two conserved cysteines and the highly charged domain as being critically involved in the plasma membrane anchoring of XLαs. The cAMP response induced by M-PTH(1-14), a parathyroid hormone analog, terminated quickly in HEK293 cells stably expressing the type 1 PTH/PTH-related peptide receptor, whereas the response remained maximal for at least 6 min in cells that co-expressed the PTH receptor and XLαs. Although isoproterenol-induced cAMP response was not prolonged by XLαs expression, a GTPase-deficient XLαs mutant found in certain tumors and patients with fibrous dysplasia of bone and McCune-Albright syndrome generated more basal cAMP accumulation in HEK293 cells and caused more severe impairment of osteoblastic differentiation of MC3T3-E1 cells than the cognate Gαs mutant (gsp oncogene). Thus, activated XLαs and Gαs traffic differently, and this may form the basis for the differences in their cellular actions.
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http://dx.doi.org/10.1074/jbc.M111.240150 | DOI Listing |
ACS Nano
January 2025
Institute of Photonics and of Nanotechnologies- National Researcher Council (IFN-CNR), LNESS Laboratory, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy.
Manipulating the optical landscape of single quantum dots (QDs) is essential to increase the emitted photon output, enhancing their performance as chemical sensors and single-photon sources. Micro-optical structures are typically used for this task, with the drawback of a large size compared to the embedded single emitters. Nanophotonic architectures hold the promise to modify dramatically the emission properties of QDs, boosting light-matter interactions at the nanoscale, in ultracompact devices.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Cuernavaca 62209, Mexico.
The energy positions and wave function shapes of the ground and excited states of impurities, including resonance states, are studied using the expansion of the impurity wave function in basis functions. The structures under study are rectangular GaAs/AlGaAs quantum wells with four different widths. In all cases, the impurity binding energy (relative to the corresponding sub-band) has a maximum at or near the center of the quantum well, decreases as the heterointerface is approached, and apparently has a limit of 0 if the impurity moves deeper into the barrier.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
Faculty of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan.
To realize the optical transfer of electron spin information, developing a semiconductor layer for efficient transport of spin-polarized electrons to the active layers is necessary. In this study, electron spin transport from a GaAs/AlGaAs superlattice (SL) barrier to InGaAs quantum dots (QDs) is investigated at room temperature through a combination of time-resolved photoluminescence and rate equation analysis, separating the two transport processes from the GaAs layer around the QDs and SL barrier. The electron transport time in the SL increases for a thicker quantum well (QW) of SL due to the weaker wavefunction overlap between adjacent QWs.
View Article and Find Full Text PDFSensors (Basel)
December 2024
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
We observed tunable characteristics of optical frequency combs (OFCs) generated from InGaAs/GaAs double quantum wells (DQWs) asymmetric waveguide two-section mode-locked lasers (TS-MLLs). This involves an asymmetric waveguide mode-locked semiconductor laser (AWML-SL) operating at a center wavelength of net modal gain of approximately 1.06 µm, which indicates a stable pulse shape, with the power-current(P-I) characteristic curve revealing a small difference between forward and reverse drive currents in the gain region.
View Article and Find Full Text PDFNature
January 2025
imec, Leuven, Belgium.
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources.
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