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Highly Reliable BiOSe Dendritic Neuron Enabling Spatial-Temporal Signal Processing for Real-World Image Classification.
ACS Nano
January 2025
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
Artificial intelligence (AI) has made significant strides by imitating biological neurons and synapses through simplified models, yet incomplete neuron functionalities can limit performance and energy efficiency in handling complex tasks. Biological neurons process input signals nonlinearly, utilizing dendrites to process spatial-temporal information. This study demonstrates the compact artificial dendrite device employing memristors based on bismuth oxyselenide (BiOSe).
View Article and Find Full Text PDFSpectroscopic Signatures of Ultra-Thin Amorphous Carbon with the Tuned Disorder Directly Grown on a Dielectric Substrate.
Adv Mater
December 2024
School of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
The reduced structural complexity of atomically thin amorphous carbons makes it suitable for semiconductor technology. Inherent challenges arise from transfer processes subsequent to growth on metallic substrates, posing significant challenges to the accurate characterization of amorphous materials, thereby compromising the reliability of spectroscopic analysis. Here this work presents a novel approach: direct growth of ultra-thin amorphous carbon with tuned disorder on a dielectric substrate (SiO/Si) using photochemical reaction and thermal annealing process with a solid precursor.
View Article and Find Full Text PDFUnconventional Near-Equilibrium Nucleation of Graphene on Si-Terminated SiC(0001) Surface.
Angew Chem Int Ed Engl
November 2024
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.
The transfer-free character of graphene growth on Silicon Carbide (SiC) makes it compatible with state-of-the-art Si semiconductor technologies for directly fabricating high-end electronics. Although significant progress has been achieved in epitaxial growth of graphene on SiC recently, the underlying nucleation mechanism remains elusive. Here, we present a theoretical study to elucidate graphene near-equilibrium nucleation on Si-terminated hexagonal-SiC(0001) surface.
View Article and Find Full Text PDFMemristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers.
ACS Appl Electron Mater
October 2024
School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom.
The development of the memristor has generated significant interest due to its non-volatility, simple structure, and low power consumption. Memristors based on graphene offer atomic monolayer thickness, flexibility, and uniformity and have attracted attention as a promising alternative to contemporary field-effect transistor (FET) technology in applications such as logic and memory devices, achieving higher integration density and lower power consumption. The use of graphene as electrodes in memristors could also increase robustness against degradation mechanisms, including oxygen vacancy diffusion to the electrode and unwanted metal ion diffusion.
View Article and Find Full Text PDFReleasing Au Electrons to Mo Site for Weakened Mo─H Bond of MoC MXene Cocatalyst Toward Improved Photocatalytic H Production.
Small
November 2024
School of Materials Science and Engineering, and School of Chemistry, Chemical Engineering and Life Sciences, Wuhan University of Technology, Wuhan, 430070, P. R. China.
MoC MXene (MoCT) is one of the most promising noble-metal-free cocatalysts for photocatalytic H production because of its excellent electron transport capacity and abundant Mo sites. However, MoCT typically exhibits a strong Mo─H bond, resulting in that the produced H difficultly desorbs from the Mo surface for the limited activity. To effectively weaken the Mo─H bond, in this paper, a regulation strategy of electron donor Au releasing electrons to the d-orbitals of Mo sites in MoCT is proposed.
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