AI Article Synopsis
- Indium phosphide (InP) nanowires exhibit a unique shape and transition between crystal phases (zinc blende and wurtzite) when grown under specific conditions using selective-area metalorganic vapor phase epitaxy (SA-MOVPE).
- A growth model explains the tapering of these nanowires based on the angle and the ratio of zinc blende to wurtzite segments.
- Changes in photoluminescence energy are linked to quantum confinement effects in the zinc blende regions of the mixed-phase structure.
Article Abstract
Indium phosphide (InP) nanowires, which have crystal phase mixing and transition from zinc blende (ZB) to wurtzite (WZ), are grown in intermediate growth conditions between ZB and WZ by using selective-area metalorganic vapor phase epitaxy (SA-MOVPE). The shape of InP nanowires is tapered unlike ZB or WZ nanowires. A growth model has been developed for the tapered nanowires, which is simply described as the relationship between tapered angle and the ratio of ZB and WZ segments. In addition, the peak energy shift in photoluminescence measurement was attributed to the quantum confinement effect of the quantum well of the ZB region located in the polytypic structure of ZB and WZ in nanowires.
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| http://dx.doi.org/10.1021/nl202365q | DOI Listing |
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