AI Article Synopsis
- Graphene, a single atomic layer of sp(2) carbon, shows promise for next-gen electronic applications, specifically in memory technology, leading to the development of graphene flash memory (GFM).
- GFM outperforms traditional flash memory by utilizing unique properties of graphene, achieving a memory window of ~6 V while operating at low program/erase voltages of ±7 V.
- With excellent retention times exceeding 10 years and minimal cell-to-cell interference, GFM could allow for significant miniaturization compared to current flash memory devices.
Article Abstract
Graphene's single atomic layer of sp(2) carbon has recently garnered much attention for its potential use in electronic applications. Here, we report a memory application for graphene, which we call graphene flash memory (GFM). GFM has the potential to exceed the performance of current flash memory technology by utilizing the intrinsic properties of graphene, such as high density of states, high work function, and low dimensionality. To this end, we have grown large-area graphene sheets by chemical vapor deposition and integrated them into a floating gate structure. GFM displays a wide memory window of ∼6 V at significantly low program/erase voltages of ±7 V. GFM also shows a long retention time of more than 10 years at room temperature. Additionally, simulations suggest that GFM suffers very little from cell-to-cell interference, potentially enabling scaling down far beyond current state-of-the-art flash memory devices.
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| http://dx.doi.org/10.1021/nn201809k | DOI Listing |
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