AI Article Synopsis
- A significant increase in the on/off ratio of ZnO nanowire field-effect transistors (FETs) was noted after treatment with Ga(+) irradiation, improving device performance.
- Transmission electron microscopy showed that Ga(+) treatment enhanced the surface crystal quality of the ZnO nanowires, leading to better electronic properties.
- The improved performance is linked to reduced chemisorption effects and fewer oxygen vacancies, which results in fewer surface trapped electrons and a lower carrier concentration.
Article Abstract
A seven orders of magnitude increase in the current on/off ratio of ZnO nanowire field-effect transistors (FETs) after Ga( + ) irradiation was observed. Transmission electron microscopy characterization revealed that the surface crystal quality of the ZnO nanowire was improved via the Ga( + ) treatment. The Ga( + ) irradiation efficiently reduces chemisorption effects and decreases oxygen vacancies in the surface layer. The enhanced performance of the nanowire FET was attributed to the decrease of surface trapped electrons and the decrease in carrier concentration.
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| http://dx.doi.org/10.1088/0957-4484/22/37/375201 | DOI Listing |
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