Phys Rev Lett
Department of Physics, University of Florida, Gainesville, Florida 32611-8440, USA.
Published: July 2011
We present experimental data and a theoretical interpretation of the conductance near the metal-insulator transition in thin ferromagnetic Gd films of thickness b ≈ 2-10 nm. A large phase relaxation rate caused by scattering of quasiparticles off spin-wave excitations renders the dephasing length L(ϕ) ≲ b in the range of sheet resistances considered, so that the effective dimension is d = 3. The conductivity data at different stages of disorder obey a fractional power-law temperature dependence and collapse onto two scaling curves for the metallic and insulating regimes, indicating an asymmetric metal-insulator transition with two distinctly different critical exponents; the best fit is obtained for a dynamical exponent z ≈ 2.5 and a correlation (localization) length critical exponent ν- ≈ 1.4 (ν+ ≈ 0.8) on the metallic (insulating) side.
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http://dx.doi.org/10.1103/PhysRevLett.107.037201 | DOI Listing |
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