Nanotechnology
Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy campus, Chennai-600 025, India.
Published: December 2008
Transparent conducting Li (0-5 wt%) doped NiO thin films with preferential growth along the (111) plane were deposited onto glass substrates by pyrolytic decomposition of nickel nitrate and lithium chloride precursors at 500 °C in air. The effect of Li concentration on the structural, optical and transport properties of NiO thin films was studied by x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), spectral transmittance, photoluminescence and linear four-probe resistivity. Activation energies as a function of Li concentration were deduced from the temperature dependent resistivity data measured in the range 300-448 K. The figure of merit was deduced by combining the spectral transmittance and sheet resistance values. The variation in properties of NiO thin film due to Li doping are discussed based on the above results. A dye-sensitized solar cell has also been fabricated for the optimized Li doped NiO thin film and the results are presented.
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http://dx.doi.org/10.1088/0957-4484/19/48/485707 | DOI Listing |
ACS Omega
January 2025
Centro de Investigación en Materiales Avanzados, S.C. (CIMAV Subsede Monterrey), Alianza Norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66628 Apodaca, Nuevo León, Mexico.
Thermal atomic layer deposition (TALD) and plasma atomic layer deposition (PALD) were used for producing thin NiO films from nickel(II) acetylacetonate Ni(acac), employing different oxidizing agents (deionized water HO, ozone O, and molecular oxygen O). The films were deposited at 300 °C (TALD) and 220 °C (PALD) over glass substrates; their physical and chemical properties were considerably influenced by the choice of oxidizing agents. In particular, ALD(HO) samples had a low growth per cycle (GPC) and a high concentration of defects.
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January 2025
Laboratory for Thin Film Energy Materials, Department of Materials and Environmental Technology, School of Engineering, Tallinn University of Technology, Ehitajate tee 5, Tallinn, 19086, Estonia.
NiO, a wide band gap hole-transporting material (HTM), is gaining attention in photovoltaics due to its optical transparency, chemical stability, and favourable band alignment with absorber. This study uses NiO nanoparticle-based HTM in semi-transparent SbS solar cells via a simple chemical precipitation method. We optimised NiO layer by varying precursor solution concentration and studied its impact on optical and structural properties, composition of nanoparticles and subsequent effect on the performance of semi-transparent SbS solar cell.
View Article and Find Full Text PDFMicron
December 2024
University of Science and Technology of China, Hefei 230026, China; Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China; High Magnetic Field Laboratory of Anhui Province, Hefei 230031, China; Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China. Electronic address:
J Phys Condens Matter
December 2024
Department of Physics, Indian Institute of Technology Delhi, IIT Delhi, Hauz Khas, New Delhi, Delhi, 110016, INDIA.
We have grown (111)- and (001)-oriented NiO thin films on (0001)-Sapphire and (001)-MgO substrates using pulsed laser deposition (PLD), respectively. DC magnetic susceptibility measurements underline that the Néel temperatures of the samples are beyond room-temperature. This is further confirmed by the presence of two-magnon Raman scattering modes in these films in ambient conditions.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210023, China.
NiO is a wide-bandgap p-type metal oxide that has extensive applications in optoelectronics and photocatalysts. Understanding the carrier dynamics in p-type NiO is pivotal for optimizing device performance, yet they remain largely unexplored. In this study, we employed femtosecond transient absorption spectroscopy to delve into the dynamics of photogenerated carriers in NiO films containing distinct prominent native defects: undoped NiO with oxygen vacancies () and O-rich NiO (denoted as NiO) with nickel vacancies ().
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