We demonstrate that the dissolution of 10 nm metal nanoparticles localized in the subsurface layer of silicate glass by static electric field can be employed to alter the optical density and surface profile of the glass-metal composite with spatial resolution of 200 nm. The developed technique, which can be referred to as electric field imprinting (EFI), offers an attractive alternative to conventional micro- and nano-pattering techniques.
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http://dx.doi.org/10.1088/0957-4484/19/41/415304 | DOI Listing |
Nanomaterials (Basel)
January 2025
State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.
The integration of a photodetector that converts optical signals into electrical signals is essential for scalable integrated lithium niobate photonics. Two-dimensional materials provide a potential high-efficiency on-chip detection capability. Here, we demonstrate an efficient on-chip photodetector based on a few layers of MoTe on a thin film lithium niobate waveguide and integrate it with a microresonator operating in an optical telecommunication band.
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January 2025
Institute of Materials Science & Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China.
Carbon catalysts have shown promise as an alternative to the currently available energy-intensive approaches for nitrogen fixation (NF) to urea, NH, or related nitrogenous compounds. The primary challenges for NF are the natural inertia of nitrogenous molecules and the competitive hydrogen evolution reaction (HER). Recently, carbon-based materials have made significant progress due to their tunable electronic structure and ease of defect formation.
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December 2024
State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (BiSe) exhibits favorable electrical and optical properties. Here, three distinct morphologies of BiSe were obtained from bulk BiSe through electrochemical intercalation exfoliation. And the morphologies of these nanostructures can be tuned by adjusting solvent polarity during exfoliation.
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December 2024
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Mexico City 04510, Mexico.
The electronic states in flat bands possess zero group velocity and null charge mobility. Recently, flat electronic bands with fully localized states have been predicted in nanowires, when their hopping integrals between first, second, and third neighbors satisfy determined relationships. Experimentally, these relationships can only be closely achieved under external pressures.
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December 2024
Department of Semiconductor Engineering, Hoseo University, Asan 31499, Republic of Korea.
A stacked nanocomposite zinc-tin oxide/single-walled carbon nanotubes (ZTO/SWNTs) active layer was fabricated for thin-film transistors (TFTs) as an alternative to the conventional single-layer structure of mixed ZTO and SWNTs. The stacked nanocomposite of the solution-processed TFTs was prepared using UV/O treatment and multiple annealing steps for each layer. The electrical properties of the stacked device were superior to those of the single-layer TFT.
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