In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a focused ion beam system. A coherent interface between the zinc-blende and wurtzite phases is identified. A mechanism for catalyst-free vapor-solid multiphase nanowire nucleation and growth is proposed.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1088/0957-4484/19/40/405706 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Nucleation and Growth of Monodisperse and Monocrystalline Wurtzite CdSe Nanocrystals: Zinc Alkanoates as Neutral Ligands.
J Am Chem Soc
January 2025
Zhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
Here, we demonstrate that monocrystalline (free of stacking faults) wurtzite CdSe nanocrystals with monodisperse size, shape (dots, rods, or wires), and facet structure are synthesized in both strongly confined and weakly confined size regimes. Considering the unique -axis of wurtzite CdSe, we introduce a new type of neutral ligand (e.g.
View Article and Find Full Text PDFThermal Rectification in Telescopic Nanowires: Impact of Thermal Boundary Resistance.
ACS Appl Mater Interfaces
January 2025
Department of Physics, Universität Basel, Basel 4056, Switzerland.
A thermal diode, which, by analogy to its electrical counterpart, rectifies heat current, is the building block for thermal circuits. To realize a thermal diode, we demonstrate thermal rectification in a GaAs telescopic nanowire system using the thermal bridge method. We measured a preferred direction of heat flux, achieving rectification values ranging from 2 to 8% as a function of applied thermal bias.
View Article and Find Full Text PDFInvestigation of the Influence of Structure, Stoichiometry, and Synthesis Temperature on the Optical Properties of CdTe Nanoplatelets.
Nanomaterials (Basel)
November 2024
Institute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Kazhymukan Str., 13, 010000 Astana, Kazakhstan.
Article Synopsis
- - This study investigates how synthesis temperature affects the properties of colloidal cadmium telluride (CdTe) nanoplatelets (NPLs), which are useful for applications like solar cells and LEDs.
- - CdTe NPLs were created at various temperatures (170 °C to 200 °C) and analyzed using techniques like UV-Vis absorption and electron microscopy to evaluate their structure and elemental makeup.
- - The results indicated that the best quality NPLs, in terms of stoichiometry and optical properties, were obtained at 190 °C, showing significant changes in crystal structure and luminescence based on temperature variations.
Boosting quantum efficiency and suppressing self-absorption in CdS quantum dots through interface engineering.
Nanoscale
December 2024
Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru 560012, India.
Applications of photoluminescence (PL) from semiconductor quantum dots (QDs) have faced the dichotomy of excitonic emission being susceptible to self-absorption and shallow defects reducing quantum yield (QY) catastrophically, and doped emissions sacrificing the tunability of the emission wavelength a quantum size effect, making it extremely challenging, if not impossible, to optimize all desirable properties simultaneously. Here we report a strategy that simultaneously optimizes all desirable PL properties in CdS QDs by leveraging interface engineering through the growth of two crystallographic phases, namely wurtzite and zinc blende phases, within individual QDs. These engineered interfaces result in sub-bandgap emissions ultrafast energy transfer (∼780 fs) from band-edge states to interface states protected from surface defects, enhancing stability and prolonging the PL lifetime.
View Article and Find Full Text PDFA superlattice interface and S-scheme heterojunction for ultrafast charge separation and transfer in photocatalytic H evolution.
Nat Commun
November 2024
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China.
The rapid recombination of photoinduced charge carriers in semiconductors fundamentally limits their application in photocatalysis. Herein, we report that a superlattice interface and S-scheme heterojunction based on MnCdS nanorods can significantly promote ultrafast charge separation and transfer. Specifically, the axially distributed zinc blende/wurtzite superlattice interfaces in MnCdS nanorods can redistribute photoinduced charge carriers more effectively when boosted by homogeneous internal electric fields and promotes bulk separation.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!