We have demonstrated a new technique to transform bulk materials into one-dimensional nanostructures. We have shown that p-type Si nanotubes (SiNTs) can be grown by a simple dual RF plasma treatment of p-type Si substrates at 500 °C. These SiNTs have diameters of ∼50-80 nm with tubular wall thickness of ∼10-15 nm. The use of Cu vapor and reactive plasma has enabled the growth of these SiNTs instead of Si nanowires.
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