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NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers. | LitMetric

AI Article Synopsis

  • The study investigates the electrical properties of NOT and NAND logic circuits made from top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al(2)O(3) gate layers.
  • Two identical FETs were connected to create a NOT logic circuit, featuring a high I(on)/I(off) ratio of around 10^8, demonstrating effective voltage transfer with a logic swing of 98%.
  • The paper also discusses the design and performance of a NAND logic circuit that consists of three top-gate FETs connected in series within a single nanowire channel.

Article Abstract

Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al(2)O(3) gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose I(on)/I(off) ratios were as high as ∼10(8) were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.

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Source
http://dx.doi.org/10.1088/0957-4484/19/26/265202DOI Listing

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