Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography.

Nanotechnology

Complex Photonic Systems (COPS), MESA+ Institute for Nanotechnology and Department of Science and Technology, University of Twente, PO Box 217, NL-7500 AE Enschede, The Netherlands.

Published: April 2008

AI Article Synopsis

  • Researchers have created high-aspect-ratio nanopore arrays in crystalline silicon, achieving unprecedented aspect ratios up to 16 using a reactive ion etching process.
  • The etching process relies on deep UV technology and a chromium mask, allowing for precise control of pore dimensions, with diameters ranging from 310 to 515 nm and pitches between 440 and 750 nm.
  • These nanopore structures have potential applications in various fields such as chemical sensors, surface wetting control, high-frequency electronics, and photonic crystals, and can be integrated into existing CMOS semiconductor fabrication technologies.

Article Abstract

We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF(6), optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips.

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Source
http://dx.doi.org/10.1088/0957-4484/19/14/145304DOI Listing

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