AI Article Synopsis
- The study investigates how mixing occurs in a tri-layer structure composed of silicon (Si) and titanium (Ti) when bombarded with high-energy gold (Au) ions.
- Researchers used advanced X-ray techniques to create a precise depth profile of the Ti layer, revealing how different thicknesses impact the intermixing process.
- It was found that a thinner (2 nm) Ti layer experiences more intense intermixing compared to a thicker (6 nm) layer, attributed to the energy confinement differences, with the thicker layer showing asymmetric intermixing due to potential structural irregularities at the interfaces.
Article Abstract
Intermixing in a Si/Ti/Si tri-layer induced by 120 MeV Au ions has been studied. X-ray standing wave analysis combined with x-ray reflectivity has been used to get a depth profile of the Ti marker layer with an accuracy of a fraction of a nanometer. Two different thicknesses of the Ti marker layer have been used to study the possible effect of layer thickness on intermixing. In the case of a 2 nm thick Ti layer intermixing is stronger as compared to a 6 nm Ti film, which can be understood in terms of a stronger confinement of the dissipated energy in the Ti layer due to increased interface scattering of δ-electrons in the case of the 2 nm thick Ti layer. In the 6 nm thick Ti layer, intermixing is asymmetric at the two interfaces, which may be due to a possible asymmetry in the interface structure in the as-deposited film itself.
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| http://dx.doi.org/10.1088/0953-8984/21/9/095006 | DOI Listing |
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