We fabricated write-once-read-many times (WORM) type organic memory devices in 8 x 8 cross-bar structure. The active material for organic based WORM memory devices is mixture of both poly(4-vinyphenol) (PVP) and Vulcan XC-72s. From the electrical characteristics of the WORM memory devices, we observed two different resistance states, low resistance state and high resistance state, with six orders of ON/OFF ratio (I(ON)/I(OFF) - 10(6)). In addition, the WORM memory devices were maintained for longer than 50000 seconds without any serious degradation.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1166/jnn.2011.3713 | DOI Listing |
Publication Analysis
Top Keywords
memory devices
20
worm memory
12
write-once-read-many times
8
resistance state
8
memory
5
devices
5
nonvolatile write-once-read-many
4
times memory
4
devices based
4
based composites
4
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!