We demonstrate a fully-reconfigurable fourth-order optical lattice filter built by cascading identical unit cells consisting of a Mach-Zehnder interferometer (MZI) and a ring resonator. The filter is fabricated using a commercial silicon complementary metal oxide semiconductor (CMOS) process and reconfigured by current injection into p-i-n diodes with a reconfiguration time of less than 10 ns. The experimental results show full control over the single unit cell pole and zero, switching the unit cell transfer function between a notch filter and a bandpass filter, narrowing the notch width down to 400 MHz, and tuning the center wavelength over the full free spectral range (FSR) of 10 GHz. Theoretical and experimental results show tuning dynamics and associated optical losses in the reconfigurable filters. The full-control of each of the four cascaded single unit cells resulted in demonstrations of a number of fourth-order transfer functions. The multimedia experimental data show live tuning and reconfiguration of optical lattice filters.
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http://dx.doi.org/10.1364/OE.19.013245 | DOI Listing |
J Am Chem Soc
January 2025
Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Colloidal crystal engineering enables the precise construction of structures with remarkable properties. However, the flexible and synergistic regulation of multiple properties of colloidal crystals remains a significant challenge. Here, we inspire from Brazilian opals to self-assemble polymer nanoparticles in the gaps of a single-layer opal substrate to fabricate large-scale binary colloidal crystals (BCCs).
View Article and Find Full Text PDFSmall
January 2025
Key Laboratory of Automobile Materials of Ministry of Education and School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China.
Constructing a solid solution is an effective strategy for regulating the properties of composite organic semiconductors. However, there presents significant challenges in fabrication and understanding of organic solid-solution semiconductors. In this study, infinite solid-solution semiconductors are successfully achieved by integrating rod-like organic molecules, thereby overcoming the limitations of current organic composite semiconductors.
View Article and Find Full Text PDFNat Nanotechnol
January 2025
Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, China.
Skyrmions can form regular arrangements, so-called skyrmion crystals (SkXs). A mode with multiple wavevectors q then describes the arrangement. While magnetic SkXs, which can emerge in the presence of Dzyaloshinskii-Moriya interaction, are well established, polar skyrmion lattices are still elusive.
View Article and Find Full Text PDFPLoS One
January 2025
School of Petrochemical Engineering, Changzhou University, Changzhou, China.
The influence of varying hydrogen content on the microstructure, mechanical properties, and fracture behavior of the metastable β titanium alloy TB8 after hydrogen charging has been investigated in this study. Several characterization methods, including optical microscopy (OM), x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM), were employed to comprehensively analyze the alloy. The results show that with the addition of hydrogen, hydrogen mainly accumulated at grain boundaries in the form of hydrides.
View Article and Find Full Text PDFNanotechnology
January 2025
IEMN, IEMN, Avenue Poincaré, CS60069, Villeneuve-d'Ascq, 59655, FRANCE.
InSb is a material of choice for infrared as well as spintronic devices but its integration on large lattice mismatched semi-insulating III-V substrates has so far altered its exceptional properties. Here, we investigate the direct growth of InSb on InP(111)B substrates with molecular beam epitaxial growth. Despite the lack of a thick metamorphic buffer layer for accommodation, we show that quasi-continuous thin films can be achieved using a very high Sb/In flux ratio.
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