Reconciliation between experimental and Monte Carlo-based simulation of the pore size distribution in mesoporous silicon.

It is demonstrated for the first time that mesoporous PS structures obtained by the electrochemical etching of p(+)(100) oriented silicon wafers might assume the peculiarity of invariance of the first peak positions in their pore size distribution curves, albeit for current densities far from the electropolishing region and at constant electrolyte composition. A new Monte Carlo-based simulation model is presented that predicts reasonably the pore size distribution of the PS layers and the observed invariance of peak position with respect to changes in current density. The main highlight of the new model is the introduction of a 'light avalanche breakdown' process in a mathematical fashion. The model is also able to predict an absolute value of 4.23 Å for the smallest pore created experimentally. It is discussed that the latter value has an exact physical meaning: it corresponds with great accuracy to the width of a void created on the surface due to the exclusion of one Si atom.