AI Article Synopsis
- - The study showcases the electroluminescence of a specific type of light-emitting device (LED) made from a Ga:ZnO/i-ZnO-SiO2 nanocomposite and p-GaN layers.
- - High-resolution electron microscopy revealed nano-clusters of ZnO, ranging in size from 2 to 7nm, within the sputtered i-ZnO-SiO2 layer.
- - The LEDs emitted clear ultraviolet light at 376 nm when a forward current of 9 mA was applied, with emission peaks attributed to radiative recombination from ZnO clusters and Mg levels in the p-GaN layer.
Article Abstract
We have demonstrated the electroluminescence (EL) of Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure light-emitting devices (LEDs). ZnO nano-clusters with sizes distributing from 2 to 7nm were found inside the co-sputtered i-ZnO-SiO2 nanocomposite layer under the observation of high-resolution transparent electron microscope. A clear UV EL at 376 nm from i-ZnO-SiO2 nanocomposite in these p-i-n heterostructure LEDs was observed under the forward current of 9 mA. The EL emission peak at 376 and 427nm of the Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure LEDs were attributed to the radiative recombination from the ZnO clusters and the Mg acceptor levels in the p-GaN layer, respectively.
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| http://dx.doi.org/10.1364/OE.19.011873 | DOI Listing |
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