Driving voltage of organic light-emitting diodes (OLEDs) was lowered by applying (NPB/MoO3)(x)/NPB as a hole transport layer (HTL). (NPB/MoO3)(x) was multi-layer periodic (MLP) structure with x changed from 0 to 3. Compared with the conventional device with 0-periodic structure, the driving voltage of the device with 1-periodic structure was the lowest. This was due to charge transfer (CT) complex formation between NPB and MoO3. The driving voltage of tris (8-hydroxyquinoline) aluminum (Alq3)-based organic light-emitting devices (OLEDs) could be lowered by 0. 8 V at 1 000 cd x m(-2) by using multiple structure of NPB/MoO3/NPB.
Download full-text PDF |
Source |
---|
Chem Sci
January 2025
J. Mike Walker '66 Department of Mechanical Engineering, Texas A&M University College Station TX 77843 USA
This perspective work examines the current advancements in integrated CO capture and electrochemical conversion technologies, comparing the emerging methods of (1) electrochemical reactive capture (eRCC) though amine- and (bi)carbonate-mediated processes and (2) direct (flue gas) adsorptive capture and conversion (ACC) with the conventional approach of sequential carbon capture and conversion (SCCC). We initially identified and discussed a range of cell-level technological bottlenecks inherent to eRCC and ACC including, but not limited to, mass transport limitations of reactive species, limitation of dimerization, impurity effects, inadequate generation of CO to sustain industrially relevant current densities, and catalyst instabilities with respect to some eRCC electrolytes, amongst others. We followed this with stepwise perspectives on whether these are considered intrinsic challenges of the technologies - otherwise recommendations were disclosed where appropriate.
View Article and Find Full Text PDFOtolaryngol Head Neck Surg
January 2025
Department of Otolaryngology-Head and Neck Surgery, University of Alabama at Birmingham Heersink School of Medicine, Birmingham, Alabama, USA.
Objective: Cystic fibrosis (CF) is a clinical entity defined by aberrant chloride (Cl) ion transport causing downstream effects on mucociliary clearance (MCC) in sinonasal epithelia. Inducible deficiencies in transepithelial Cl transport via CF transmembrane conductance regulator (CFTR) has been theorized to be a driving process in recalcitrant chronic rhinosinusitis (CRS) in patients without CF. We have previously identified that brief exposures to bacterial lipopolysaccharide (LPS) in mammalian cells induces an acquired dysfunction of CFTR in vitro and in vivo.
View Article and Find Full Text PDFJ Phys Chem B
January 2025
Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Physical vapor deposition is widely used in the fabrication of organic light-emitting diodes and has the potential to adjust the density and orientation through substrate temperature control, which may lead to enhanced electrical performance. However, it is unclear whether this enhanced property is because of the horizontal molecular orientation or the increased density. The effects of the density and orientation on the electrical properties of a potential electron transport material, (3-dibenzo[c,h]acridin-7-yl)phenyl)diphenylphosphine oxide (TPPO-dibenzacridine), were investigated.
View Article and Find Full Text PDFMicromachines (Basel)
January 2025
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an I/I ratio of more than seven orders of magnitude, with I reaching up to 2.
View Article and Find Full Text PDFMicromachines (Basel)
January 2025
College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China.
The short-circuit (SC) robustness of SiC MOSFETs is critical for high-power applications, yet 1.2 kV devices often struggle to meet the industry-standard SC withstand time (SCWT) under practical operating conditions. Despite growing interest in higher voltage classes, no prior study has systematically evaluated the SC performance of 1.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!