Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells.

Nanoscale Res Lett

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P,O, Box 603, Beijing 100190, PR China.

Published: February 2011

Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211199PMC
http://dx.doi.org/10.1186/1556-276X-6-149DOI Listing

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