AI Article Synopsis
- The study focused on exciton localization in binary GaN nanorods, utilizing micro- and time-resolved photoluminescence measurements.
- Observations of phonon replicas indicated strong localization of excitons at lower energy levels, particularly associated with basal stacking faults.
- The exciton transition lifetimes were found to be less than 100 ps, attributed to increased surface recombination effects.
Article Abstract
We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I1). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails. The lifetimes of the I1 and I2 transitions were measured to be < 100 ps due to enhanced surface recombination.PACS: 78.47.+p, 78.55.-m, 78.55.Cr, 78.66.-w, 78.66.Fd.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212230 | PMC |
| http://dx.doi.org/10.1186/1556-276X-6-81 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!