The Curie temperature T(C) of ferromagnetic semiconductor alloys depends not only on the alloy composition, but also on the spatial configuration of the magnetic impurities. Here we use a set of first-principle-calculated Curie temperatures to uncover-via a statistical, 'data mining' approach-the rules that govern the dependence of T(C) on the configuration of Mn substitutional impurities in GaAs. We find that T(C) is lowered (raised) when the average number of first (third and fourth) nearest-neighbour Mn pairs increases, suggesting simple atom-by-atom strategies to achieve high T(C) in (Ga, Mn)As alloys.
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http://dx.doi.org/10.1088/0953-8984/19/24/242203 | DOI Listing |
Materials (Basel)
December 2020
Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland.
Structural analysis of epitaxial layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor (DMS), together with investigations of their magnetotransport properties, has been thoroughly performed. The obtained results are compared with those for the reference (Ga,Mn)As layers, grown under similar conditions, with the aim to reveal an impact of Bi incorporation on the properties of this DMS material. Incorporation of Bi into GaAs strongly enhances the spin-orbit coupling strength in this semiconductor, and the same has been expected for the (Ga,Mn)(Bi,As) alloy.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2020
Institute of Electrochemical & Energy Technology, Department of Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Multifunctional nanoarchitecture (MNA) on catalysts has attracted great attention because of its capability to improve the performance, durability, and resistance to unwanted side reactions. Such structures, however, are conventionally prepared by deposition methods, which inherently suffer from costly and time-consuming drawbacks. Here, we report a simple one-step process to successfully construct a novel MNA with core-shell nanoparticles anchored at the heterointerface of dual-phase oxide substrates through a phase transition and in situ exsolution of perovskite LaSrFeNiNbO (LSFNNb0.
View Article and Find Full Text PDFPhys Chem Chem Phys
March 2014
Department of Physical Chemistry, Basque Country University UPV/EHU, 48080 Bilbao, Spain.
We describe a magnetic shape memory alloy, in which it is the nanostructural confinement that influences both the crystal geometry and the electronic and magnetic properties. We use calculations from first-principles on shape memory MnAs nanowires to study the influence of strain on the resulting crystallographic phases, which arise at their surfaces. We show that MnAs nanowires as thin as two nanometers can be stable in a new crystal geometry which is induced by one-dimensionality and hence is unknown in the bulk, typically hexagonal.
View Article and Find Full Text PDFJ Phys Condens Matter
May 2013
MAX-IV Laboratory, Lund University, Lund, Sweden.
The annealing-induced formation of (Mn, Ga)As nanocrystals in (Ga, Mn)As/GaAs superlattices was studied by x-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 Å thick (Ga, Mn)As layers separated by 25, 50 and 100 Å thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 °C), and then annealed at high temperatures of 400, 560 and 630 °C. The high-temperature annealing causes decomposition to a (Ga, Mn)As ternary alloy and the formation of (Mn, Ga)As nanocrystals inside the GaAs matrix.
View Article and Find Full Text PDFJ Nanosci Nanotechnol
November 2012
Institute of Physics, PAS, al. Lotnikow 32/46, PL-02668 Warsaw, Poland.
Granular GaAs:(Mn, Ga)As films were prepared by annealing at 500 degrees C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga(1-x)Mn(x)As/GaAs layers (x = 0.025, 0.
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