An optical sensor has been developed for high-acidity ([H(+)] = 1-11 M) measurements. The sensor is made of thin films of silica sol-gels doped with an acid indicator. Acid- and base-catalyzed methods to make the sol-gel films have been studied, and the properties of the sol-gel sensors prepared by these methods are discussed. The acid-catalyzed method was found to give more robust films and has been optimized to prepare thin films which are mechanically and chemically stable for a period of at least 3 months. The performance of the sensors resulted in a relative standard deviation of less than 2.5%. The response time is short (1 s), and a small hysteresis was observed during reproducibility measurements with 2-10 M HCl solutions.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/ac970258g | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer.
Nano Converg
January 2025
Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup-si, Jeolabuk-do, 56212, Republic of Korea.
Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of AlO-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor.
View Article and Find Full Text PDFDark-Field Absorbance Circular Dichroism of Oriented Chiral Thin Films.
J Phys Chem Lett
January 2025
Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States.
Dark-field and confocal approaches to circular dichroism (CD) spectroscopy of uniaxial thin films examine the relationship between symmetry and incoherence in the nonreciprocal CD response, or the component that is antisymmetric about the light propagation direction. Modifying a conventional CD spectrometer for low-angle scattering detection isolates incoherent contributions to nonreciprocal CD of drop-cast thin films, boasting 5-to-10-fold enhancements in CD dissymmetry parameters. Conversely, confocal detection suppresses the nonreciprocal CD response.
View Article and Find Full Text PDFUpconverter loaded MoS counter electrode for broadband dye-sensitized solar cell applications.
Front Chem
January 2025
Nanophotonics Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli, India.
An interesting approach of including an upconverter in the MoS counter electrode can yield broadband light harvesting Pt-free DSSC assembly. Here different upconverter (UC) nanoparticles (Yb, Er incorporated NaYF, YF, CeO & YO) were synthesized and loaded in MoS thin film by hydrothermal method. The inclusion of UCs in MoS films exposed without any secondary formation of upconverters and the uniform deposition of the films are confirmed through XRD and FESEM analysis respectively.
View Article and Find Full Text PDFInterfacial Engineering Facilitates Real-Time Detection of Dual Hazardous Gases at ppb Levels via Single-Step Hydrothermal Nanoarchitectonics of Self-Assembled PbSnS/SnO Heterostructures.
ACS Sens
January 2025
Department of Physics, National Chung Hsing University, Taichung 402, Taiwan.
Next-generation real-time gas sensors are crucial for detecting multiple gases simultaneously with high sensitivity and selectivity. In this study, ternary metal sulfide (PbSnS)-incorporated metal oxide (SnO) heterostructures were synthesized via a one-step hydrothermal method. Characterizations such as X-ray diffraction, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy confirmed the successful formation of PbSnS/SnO heterostructures.
View Article and Find Full Text PDFSelective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H- Silicon Carbide.
ACS Nano
January 2025
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high-temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness, which makes complex micromachining difficult. Photoelectrochemical (PEC) etching is a simple, rapid means of wet processing SiC, including the use of dopant-selective etch stops that take advantage of the mature SiC homoepitaxy.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!