The gas sensitivity exhibited by nanoparticles of 1 wt% Pd catalysed antimony doped tin dioxide (ATO) prepared by a citrate-nitrate process is reported here. The reduction of particle size to <3 nm, a dimension smaller than double the thickness of the charge depletion layer, has resulted in an exceptionally high butane sensitivity and selectivity. The sensitivity and selectivity of ATO particles of different sizes unequivocally proved that reducing the size of particles to below twice the Debye length dimension produces materials with exceptionally high sensitivity and selectivity for sensor applications. The sensitivity of the samples towards 1000 ppm butane varied in the order 98%>55%>47%, for CNP>SP>CP samples having crystallite sizes of the order of 2.4 nm to 18 nm to 25 nm, respectively. The ATO nanoparticles exhibited not only a remarkable increase in gas sensitivity of around 98% towards 1000 ppm butane at 350 °C, but also a preferential selectivity to butane compared to other gases such as CO, CO2, SO2, CH4 and H2. In addition to the exceptionally high sensitivity and selectivity, the developed sensors also exhibited an improved response time and long term stability, which are of paramount importance for practical device development.
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http://dx.doi.org/10.1088/0957-4484/22/27/275506 | DOI Listing |
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January 2025
MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China.
The photocatalytic activity of lead-free perovskite heterostructures currently suffers from low efficiency due to the lack of active sites and the inadequate photogenerated carrier separation, the latter of which is hindered by slow charge transfer at the heterostructure interfaces. Herein, a facile strategy is reported for the construction of lead-free halide-perovskite-based heterostructure with swift interfacial charge transfer, achieved through direct partial conversion of 2D antimony oxybromide SbOBr to generate CsSbBr/SbOBr heterostructure. Compared to the traditional electrostatic self-assembly method, this approach endows the CsSbBr/SbOBr heterostructure with a tightly interconnected interface through in situ partial conversion, significantly accelerating interfacial charge transfer and thereby enhancing the separation efficiency of photogenerated carriers.
View Article and Find Full Text PDFAdv Mater
December 2024
Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
Semiconducting single-wall carbon nanotubes (s-SWCNTs) represent one of the most promising materials for surpassing Moore's Law and developing the next generation of electronic devices. Despite numerous developed approaches, reducing the contact resistance of s-SWCNTs networks remains a significant challenge in achieving further enhancements in electronic performance. In this study, antimony triiodide (SbI) is efficiently encapsulated within high-purity s-SWCNTs films at low temperatures, forming 1D SbI@s-SWCNTs vdW heterostructures.
View Article and Find Full Text PDFSmall
December 2024
College of Physics and Energy, Fujian Normal University, Fuzhou, 350117, China.
Antimony sulfide (SbS) is regarded as one of the potential candidates for the next generation of photovoltaic absorber due to its excellent photoelectric properties. However, the selection and optimization of the hole transport layer (HTL) is still a major challenge for efficiency breakthrough of the SbS solar cells. In this work, lead sulfide (PbS) is deposited as a HTL of the SbS device by thermal evaporation for the first time.
View Article and Find Full Text PDFNanomaterials (Basel)
November 2024
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
In the original publication [...
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
School of Metallurgy and Environment, Central South University, Changsha 410083, China.
The susceptibility of bulk and exfoliated nanolayered arsenic to oxidation has been a significant obstacle limiting their widespread application and safe disposal. Here we report a controllable antimony-doped (Sb-doped) method via chemical vapor transport (CVT) with SnI as a transport agent to prepare the bulk arsenic. After 96 h of exposure to air, the oxygen content on the surface of Sb-doped arsenic with SnI is 67% lower compared to the undoped arsenic with SnI, and 89% lower than the control group (undoped arsenic without SnI).
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