Whole-cell, patch-clamp recordings were carried out in acutely dissociated neurons from entorhinal cortex (EC) layer II to study the effects of Zn(2+) on Na(+) current kinetics and voltage dependence. In the presence of 200 μM extracellular Cd(2+) to abolish voltage-dependent Ca(2+) currents, and 100 mM extracellular Na(+), 1 mM Zn(2+) inhibited the transient Na(+) current, I (NaT), only to a modest degree (~17% on average). A more pronounced inhibition (~36%) was induced by Zn(2+) when extracellular Na(+) was lowered to 40 mM. Zn(2+) also proved to modify I (NaT) voltage-dependent and kinetic properties in multiple ways. Zn(2+) (1 mM) shifted the voltage dependence of I (NaT) activation and that of I (NaT) onset speed in the positive direction by ~5 mV. The voltage dependence of I (NaT) steady-state inactivation and that of I (NaT) inactivation kinetics were markedly less affected by Zn(2+). By contrast, I (NaT) deactivation speed was prominently accelerated, and its voltage dependence was shifted by a significantly greater amount (~8 mV on average) than that of I (NaT) activation. In addition, the kinetics of I (NaT) recovery from inactivation were significantly slowed by Zn(2+). Zn(2+) inhibition of I (NaT) showed no signs of voltage dependence over the explored membrane-voltage window, indicating that the above effects cannot be explained by voltage dependence of Zn(2+)-induced channel-pore block. These findings suggest that the multiple, voltage-dependent state transitions that the Na(+) channel undergoes through its activation path are differentially sensitive to the gating-modifying effects of Zn(2+), thus resulting in differential modifications of the macroscopic current's activation, inactivation, and deactivation. Computer modeling provided support to this hypothesis.
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Sensors (Basel)
January 2025
Faculty of Arts and Sciences, Bolu Abant Izzet Baysal University, 14280 Bolu, Turkey.
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January 2025
Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany.
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January 2025
Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China.
The n-TiO nanoballs-sticks (TiO NBSs) were successfully deposited on p-lightly boron-doped diamond (LBDD) substrates by the hydrothermal method. The temperature-dependent optoelectronic properties and carrier transport behavior of the n-TiO NBS/p-LBDD heterojunction were investigated. The photoluminescence (PL) of the heterojunction detected four distinct emission peaks at 402 nm, 410 nm, 429 nm, and 456 nm that have the potential to be applied in white-green light-emitting devices.
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January 2025
Department of Wood Processing and Biomaterials, Faculty of Forestry and Wood Sciences, Czech University of Life Sciences Prague, Kamýcká 1176, 16500 Prague, Czech Republic.
Electron microscopy (EM) is a key tool for studying the microstructure of wood; however, observing uncoated samples poses a challenge due to surface charging. This study aims to identify the critical voltage that allows for the effective observation of uncoated wood samples without significant loading. As part of the experiment, samples of different wood species were tested, including Acacia ( L.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
School of Microelectronics, Xidian University, Xi'an 710071, China.
The failure of different chips under working conditions is influenced by various stress states such as different voltages, temperatures, stress durations, and stress variations. Therefore, the failure time has a great degree of dispersion, and similar chips may exhibit different failure mechanisms due to variations in their working environments. This paper proposes three system-on-chip reliability failure prediction unit circuits: the time-dependent dielectric breakdown prediction circuit, the negative bias temperature instability prediction circuit, and the hot carrier injection prediction circuit.
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