We demonstrate injection, transport, and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer and bilayer graphene. We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that chemical vapor deposition specific structural differences such as nanoripples do not limit spin transport in the present samples. Our observations make Cu-CVD graphene a promising material of choice for large scale spintronic applications.
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http://dx.doi.org/10.1021/nl200714q | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea.
The unique characteristics of metasurfaces to precisely control the amplitude, phase, and polarization of light within a thin, flat footprint make them a promising replacement for bulky optical components. However, fabrication methods of conventional metasurfaces have suffered from low throughput and high costs, limiting scalability and practical application. To address these challenges, an advanced fabrication technique is developed by combining deep-ultraviolet argon fluoride photolithography with wafer-scale nanotransfer printing to facilitate the scalable fabrication of metal-insulator-metal structures.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, Guangdong 518107, P.R. China.
Indium (In) reduction is a hot topic in transparent conductive oxide (TCO) research. So far, most strategies have been focused on reducing the layer thickness of In-based TCO films and exploring TCOs. However, no promising industrial solution has been obtained yet.
View Article and Find Full Text PDFNat Commun
January 2025
School of Materials Science and Engineering, Peking University, Beijing, China.
In the realm of modern materials science, horizontally aligned carbon nanotube arrays stand as promising materials for the development of next-generation integrated circuits. However, their large-scale integration has been impeded by the constraints of current fabrication techniques, which struggle to achieve the necessary uniformity, density, and size control of carbon nanotube arrays. Overcoming this challenge necessitates a significant shift in fabrication approaches.
View Article and Find Full Text PDFNat Commun
January 2025
Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China.
The recently emerged remote epitaxy technique, utilizing 2D materials (mostly graphene) as interlayers between the epilayer and the substrate, enables the exfoliation of crystalline nanomembranes from the substrate, expanding the range of potential device applications. However, remote epitaxy has been so far applied to a limited range of material systems, owing to the need of stringent growth conditions to avoid graphene damaging, and has therefore remained challenging for the synthesis of oxide nanomembranes. Here, we demonstrate the remote epitaxial growth of an oxide nanomembrane (vanadium dioxide, VO) with a sub-nanometer thick amorphous interlayer, which can withstand potential sputtering-induced damage and oxidation.
View Article and Find Full Text PDFNature
January 2025
imec, Leuven, Belgium.
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources.
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