We present a model of dissipative transport in the fractional quantum Hall regime. Our model takes account of tunneling through saddle points in the effective potential for excitations created by impurities. We predict the temperature range over which activated behavior is observed and explain why this range nearly always corresponds to around a factor two in temperature in both integer quantum Hall and fractional quantum Hall systems. We identify the ratio of the gap observed in the activated behavior and the temperature of the inflection point in the Arrhenius plot as an important diagnostic for determining the importance of tunneling in real samples.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1103/PhysRevLett.106.126804 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Measurement of multidifferential cross sections for dijet production in proton-proton collisions at .
Eur Phys J C Part Fields
January 2025
A measurement of the dijet production cross section is reported based on proton-proton collision data collected in 2016 at by the CMS experiment at the CERN LHC, corresponding to an integrated luminosity of up to 36.3 . Jets are reconstructed with the anti- algorithm for distance parameters of and 0.
View Article and Find Full Text PDFIntegrating biophysical modeling, quantum computing, and AI to discover plastic-binding peptides that combat microplastic pollution.
PNAS Nexus
January 2025
Systems Engineering, College of Engineering, Cornell University, Ithaca, NY 14853, USA.
Methods are needed to mitigate microplastic (MP) pollution to minimize their harm to the environment and human health. Given the ability of polypeptides to adsorb strongly to materials of micro- or nanometer size, plastic-binding peptides (PBPs) could help create bio-based tools for detecting, filtering, or degrading MNP pollution. However, the development of such tools is prevented by the lack of PBPs.
View Article and Find Full Text PDFCryogenic in-memory computing using magnetic topological insulators.
Nat Mater
January 2025
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China.
Machine learning algorithms have proven to be effective for essential quantum computation tasks such as quantum error correction and quantum control. Efficient hardware implementation of these algorithms at cryogenic temperatures is essential. Here we utilize magnetic topological insulators as memristors (termed magnetic topological memristors) and introduce a cryogenic in-memory computing scheme based on the coexistence of a chiral edge state and a topological surface state.
View Article and Find Full Text PDFOptimization of In-Situ Growth of Superconducting Al/InAs Hybrid Systems on GaAs for the Development of Quantum Electronic Circuits.
Materials (Basel)
January 2025
CNR-IOM-Istituto Officina dei Materiali, Consiglio Nazionale delle Ricerche, 34149 Trieste, Italy.
Hybrid systems consisting of highly transparent channels of low-dimensional semiconductors between superconducting elements allow the formation of quantum electronic circuits. Therefore, they are among the novel material platforms that could pave the way for scalable quantum computation. To this aim, InAs two-dimensional electron gases are among the ideal semiconductor systems due to their vanishing Schottky barrier; however, their exploitation is limited by the unavailability of commercial lattice-matched substrates.
View Article and Find Full Text PDFInterfacial Strain-Driven Large Topological Hall Effects in Supermalloy Thin Films with Noncoplanar Spin Textures.
ACS Appl Mater Interfaces
January 2025
School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India.
Materials exhibiting topological transport properties, such as a large topological Hall resistivity, are crucial for next-generation spintronic devices. Here, we report large topological Hall resistivities in epitaxial supermalloy (NiFeMo) thin films with [100] and [111] orientations grown on single-crystal MgO (100) and AlO (0001) substrates, respectively. While X-ray reciprocal maps confirmed the epitaxial growth of the films, X-ray stress analyses revealed large residual strains in the films, inducing tetragonal distortions of the cubic NiFeMo unit cells.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!