Silicon-on-insulator (SOI) has been used as a platform for near-infrared photonic devices for more than twenty years. Longer wavelengths, however, may be problematic for SOI due to higher absorption loss in silicon dioxide. In this paper we report propagation loss measurements for the longest wavelength used so far on SOI platform. We show that propagation losses of 0.6-0.7 dB/cm can be achieved at a wavelength of 3.39 µm. We also report propagation loss measurements for silicon on porous silicon (SiPSi) waveguides at the same wavelength.
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http://dx.doi.org/10.1364/OE.19.007112 | DOI Listing |
Ying Yong Sheng Tai Xue Bao
October 2024
CAS Key Laboratory of Forest Ecology and Management, Institute of Applied Ecology, Chinese Academy of Sciences, Shenyang 110016, China.
Successive crop harvest results in soil silicon (Si) loss, which constantly reduces soil available Si. Agricultural measures that can increase the availability of soil Si are in urgent need in agroecosystems. Enhanced weathering of silicate minerals can effectively replenish soil Si, which will promote plant uptake of Si, formation of plant phytolith occluded carbon (PhytOC), and the sequestration of atmospheric CO.
View Article and Find Full Text PDFBMC Plant Biol
December 2024
The Franciszek Górski Institute of Plant Physiology, Polish Academy of Sciences, Niezapominajek 21, Kraków, 30-239, Poland.
Background: Silicon has an important role in regulating water management in plants. It is deposited in cell walls and creates a mechanical barrier against external factors. The aim of this study was to determine the role of silicon supplementation in the synthesis and distribution of callose in oilseed rape roots and to characterize the modifications of cell wall structure of these organs after exposure to drought stress.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
December 2024
Universität Heidelberg: Universitat Heidelberg, Anorganisch-Chemisches Institut, Im Neuenheimer Feld 270, 69120, Heidelberg, GERMANY.
Electromerism (aka. valence tautomerism) corresponds to the switching of electronic distributions between redox-active ligands and central elements. While this phenomenon is well established for several transition metals, the Pd(0)/Pd(II) couple could not yet be involved due to the high energy of the Pd(0) state.
View Article and Find Full Text PDFInverse design (ID) is a computational method that systematically explores a design space to find optimal device geometries based on specific performance criteria. In silicon photonics, ID often generates design features that degrade significantly due to the fabrication process, limiting the applicability of these devices in scalable fabrication. We demonstrate a solution to this performance degradation through fabrication-aware inverse design (FAID), integrating lithography models for deep-ultraviolet (DUV) lithography and electron-beam lithography (EBL) into the shape optimization approach of ID.
View Article and Find Full Text PDFThe cross talk and power consumption of the 2 × 2 optical switch is a key metric in the design of large-scale photonic integrated circuits (PICs). We build a theoretical model of a 2 × 2 Mach-Zehnder interferometer (MZI) optical switch, taking into account both imbalances in the arm loss and the coupler splitting ratio. The splitting ratio imbalance requirement for a given switch cross talk is summarized, which provides a guideline for the switch design.
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