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Energy-Efficient Integrated Electro-Optic Memristors.
Nano Lett
December 2024
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K.
Neuromorphic photonic processors are redefining the boundaries of classical computing by enabling high-speed multidimensional information processing within the memory. Memristors, the backbone of neuromorphic processors, retain their state after programming without static power consumption. Among them, electro-optic memristors are of great interest, as they enable dual electrical-optical functionality that bridges the efficiency of electronics and the bandwidth of photonics.
View Article and Find Full Text PDFCMOS-compatible, AlScN-based integrated electro-optic phase shifter.
Nanophotonics
August 2024
University of Pennsylvania, Philadelphia, PA 19104, USA.
Article Synopsis
- The study investigates AlScN, a new photonic material, for its potential in electro-optic phase shifting and modulation in integrated photonic devices.
- AlScN is compatible with CMOS technology, which could enable large-scale production of photonic modulators and shows improved optical nonlinearity compared to traditional AlN.
- Measurements of the electro-optic effect in AlScN-based devices revealed an electro-optic coefficient of around 750 V cm, but the response was less than anticipated, prompting a discussion on possible reasons and future developments in AlScN photonics.
Thermal Characterization of Ferroelectric AlBN for Nonvolatile Memory.
ACS Appl Mater Interfaces
December 2024
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Boron (B)-substituted wurtzite AlN (AlBN) is a recently discovered wurtzite ferroelectric material that offers several advantages over ferroelectric HfZrO and PbZrTiO. Such benefits include a relatively low growth temperature as well as a thermally stable, and thickness-stable ferroelectric polarization; these factors are promising for the development of ferroelectric nonvolatile random-access memory (FeRAM) that are CMOS-compatible, scalable, and reliable for storing data in harsh environments. However, wurtzite ferroelectric materials may undergo exacerbated self-heating upon polarization switching relative to other ferroelectric materials; the larger energy loss is anticipated due to the higher coercive field and remanent polarization.
View Article and Find Full Text PDFRoom-temperature waveguide integrated quantum register in a semiconductor photonic platform.
Nat Commun
November 2024
Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, China.
Article Synopsis
- * The study successfully integrates single electron-nuclear spin entanglement into a silicon-carbide-on-insulator (SiCOI) waveguide, achieving a high fidelity entangled state of 0.89.
- * The entangled quantum register maintains strong performance with a fidelity of 0.88 after integration, showcasing SiCOI's potential for scalable quantum photonic applications.
Exploring the potential of self-pulsing optical microresonators for spiking neural networks and sensing.
Commun Phys
November 2024
Nanoscience Laboratory, Department of Physics, University of Trento, Trento, Italy.
Photonic platforms are promising for implementing neuromorphic hardware due to their high processing speed, low power consumption, and ability to perform parallel processing. A ubiquitous device in integrated photonics, which has been extensively employed for the realization of optical neuromorphic hardware, is the microresonator. The ability of CMOS-compatible silicon microring resonators to store energy enhances the nonlinear interaction between light and matter, enabling energy efficient nonlinearity, fading memory and the generation of spikes via self-pulsing.
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