Bi₀.₅Sb₁.₅Te₃ films were prepared by a novel chemical vapor transport process through delicate controlling the temperature of the substrate and vapor source. The power factor reaches 30 μW cm⁻¹ K⁻¹ at room temperature, which is much higher than the value of the Bi₀.₅Sb₁.₅Te₃ films prepared by other techniques. The enhancement of thermoelectric properties might be attributed to the higher carrier mobility (252 cm² V⁻¹ s⁻¹), coming from the effective interparticle contiguity of (00L) oriented nanoplates embedded in the present Bi₀.₅Sb₁.₅Te₃ films.
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